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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF341 description silicon gate for fast switching speed rugged applications high voltage high speed application absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 350 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 8 a p tot total dissipation@tc=25 150 w t j max. operating junction temperature -55~150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.83 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF341 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs =0; i d =250 a 350 v v gs(th) gate threshold voltage v ds = v gs ; i d =250 a 2.0 4.0 v r ds(on) drain-source on-stage resistance v gs =10v; i d =5.0a 0.6 i gss gate source leakage current v gs = 20v;v ds =0 100 na i dss zero gate voltage drain current v ds =150v; v gs =0 250 ua v sd diode forward voltage i s =8.0a; v gs =0 2.0 v ciss input capacitance v ds =25v; v gs =0v; f t =1mhz 800 pf crss reverse transfer capacitance 150 coss output capacitance 450 tr rise time r gs =12.5 i d =5.0a; v dd =90v; r l =50 25 ns td(on) turn-on telay time 15 tf fall time 20 td(off) turn-off delay time 30 pdf pdffactory pro www.fineprint.cn |
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